Title :
Low temperature analysis of quantum dot solar cells
Author :
Polly, Stephen J. ; Bittner, Zachary S. ; Baile, Christopher G. ; Forbes, David V. ; Dai, Yushuai ; Hubbard, Seth M.
Author_Institution :
Rochester Inst. of Technol., Rochester, NY, USA
Abstract :
The low temperature operation of GaAs solar cells incorporating a superlattice of InAs quantum dots (QD) was studied to explore carrier removal mechanisms. Dark current-voltage characteristics of QD devices did not show a temperature dependence, which suggests a tunneling-dominated recombination mechanism. Two-photon extraction was investigated using a pump-probe method, but no evidence of two-photon was observed. Finally, 1-sun measurements revealed a resonant-tunneling contribution to the current in the QD devices, which became prominent as temperature was reduced.
Keywords :
gallium arsenide; indium compounds; measurement systems; quantum dots; resonant tunnelling; solar cells; superlattices; 1-sun measurements; GaAs; InAs; QD devices; carrier removal mechanisms; dark current-voltage characteristics; low temperature analysis; pump-probe method; quantum dot solar cells; resonant-tunneling contribution; superlattice; temperature dependence; tunneling-dominated recombination mechanism; two-photon extraction; Atmospheric measurements; Gallium arsenide; Radiative recombination; Strain; Temperature measurement; InAs; Quantum Dot. Tunneling; Two-Photon;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-0064-3
DOI :
10.1109/PVSC.2012.6317693
