DocumentCode
351480
Title
The small-signal parameters and noise characterization for inverted GaAs/AlGaAs high electron mobility transistors
Author
Liu, Kuo-Wei ; Anwar, A.F.M.
Author_Institution
Graduate Inst. of Mater. Sci., Chinese Culture Univ., Taipei, Taiwan
Volume
1
fYear
2000
fDate
2000
Firstpage
141
Abstract
A complete analytical noise analysis for I-HEMTs devices is presented. The author would like to extend the proposed noise research to other HEMT structure, such as GaAs/AlGaAs Inverted HEMT structures which can be considered as an alternative devices for high-frequency applications
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor device models; semiconductor device noise; GaAs-AlGaAs; I-HEMT; high frequency device; inverted high electron mobility transistor; noise; small-signal analysis; Circuit noise; Electron mobility; Gallium arsenide; HEMTs; MODFETs; Noise figure; Noise generators; Ohmic contacts; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location
Nis
Print_ISBN
0-7803-5235-1
Type
conf
DOI
10.1109/ICMEL.2000.840541
Filename
840541
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