Title :
Towards intermediate-band formation in solar cells with AlGaInAs quantum dots
Author :
Kremling, Stefan ; Schneider, Christian ; Braun, Tristan ; Tarakina, Nadezda V. ; Adams, Maxwell ; Lermer, Matthias ; Reitzenstein, Stephan ; Worschech, Lukas ; Höfling, Sven ; Forchel, Alfred ; Kamp, Martin
Author_Institution :
Tech. Phys., Univ. Wurzburg, Würzburg, Germany
Abstract :
We focus on the integration of composition tailored AlGaInAs quantum dots (QDs) in an AlGaAs p-i-n structure for solar cell applications. These QDs can absorb a wide range of the solar spectrum from the red visible to the near infrared spectral range. Different samples were grown and investigated in order to study the influence of doping, number of QD layers, QD arrangement and QD strain on the device performance. We anticipate that by suitable choice of QD composition, shape and barrier thickness electronic coupling between QD layers can be established to generate an intermediate band. Based on our result we propose a route towards intermediate band solar cells with these quaternary QDs.
Keywords :
aluminium compounds; arsenic compounds; gallium compounds; indium compounds; quantum dots; solar cells; ternary semiconductors; AlGaInAs; QD arrangement; QD composition; QD layers; QD strain; device performance; intermediate band solar cells; intermediate-band formation; near infrared spectral range; p-i-n structure; quantum dots; solar spectrum; Absorption; Doping; Gallium arsenide; Photonic band gap; Photovoltaic cells; Quantum dots; Wave functions; Energy efficiency; III–V semiconductor materials; Quantum dots; Semiconductor devices; Solar energy;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-0064-3
DOI :
10.1109/PVSC.2012.6317695
