Title :
The real band diagram for the metal-semiconductor heterojunction
Author :
Shekhovtsov, L.V.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
Abstract :
For NbN-GaAs heterostructures the transverse photovoltage spectral curves were studied. The photovoltage taken for the samples annealed at T=850°C changed its polarity near the GaAs intrinsic absorption edge. A complicated form of the observed spectral curves is related to the interaction between the photocurrents generated by illumination in both the GaAs bulk and space charge region near the NbN film. Heat annealing at T=950°C makes the near-surface band bending uniform; the photovoltage holds its polarity in the spectral range studied. Basing on the analysis of the spectral curves features, we have built a real band diagram for the NbN-GaAs heterojunction
Keywords :
III-V semiconductors; annealing; gallium arsenide; niobium compounds; photovoltaic effects; semiconductor-metal boundaries; space charge; 850 to 950 C; NbN-GaAs; absorption edge; annealing; band structure; metal-semiconductor heterojunction; photovoltage; space charge; spectral curve; Absorption; Annealing; Charge carriers; Gallium arsenide; Heterojunctions; Lighting; Photoconductivity; Space charge; Spectral analysis; Substrates;
Conference_Titel :
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-5235-1
DOI :
10.1109/ICMEL.2000.840553
