Application study of the benefits for using silicon-carbide versus silicon in power modules

On a device-level, the benefits of Silicon-Carbide (SiC) versus Silicon (Si) power components have been documented over the past several years [1-5]. The fabrication process for SiC components continues to mature and SiC products are now commercially available. The development of high-current MOSFETs and their use in all-SiC power modules have been reported [6-9]. Recently, the experimental characterization and performance of a 1200-V, 800-A all-SiC dual module has been documented [10,11]. This paper outlines the development of a simulation model for the 800-A all-SiC dual module from this experimental characterization data. Using this model, a comparison study is presented for using an all-SiC module versus an Si IGBT module in DC-DC and DC-AC power circuit applications at a 900-A, 600-A, and 300-A module level. Upgrading the power module from Si to SiC devices resulted in lower loss in nearly every simulated scenario.