DocumentCode
351486
Title
A SPICE modeling of the negative resistance breakdown region for the bipolar junction transistor
Author
Dobrescu, D. ; Dobrescu, D. ; Rusu, A.
Author_Institution
Fac. of Electron. & Telecommun., Bucharest Univ., Romania
Volume
1
fYear
2000
fDate
2000
Firstpage
201
Abstract
This paper presents and studies new developed SPICE models for the breakdown region of the junction transistor biased in the common-emitter configuration. In such case, the output electrical characteristic has a negative slope, especially for very small or negative base currents
Keywords
SPICE; bipolar transistors; negative resistance; semiconductor device breakdown; semiconductor device models; SPICE model; bipolar junction transistor; breakdown region; electrical characteristics; negative resistance; Bipolar transistors; Breakdown voltage; Electric breakdown; Electric resistance; Electric variables; Employee welfare; Equations; SPICE; Semiconductor device breakdown; Semiconductor devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location
Nis
Print_ISBN
0-7803-5235-1
Type
conf
DOI
10.1109/ICMEL.2000.840555
Filename
840555
Link To Document