Title :
A SPICE modeling of the negative resistance breakdown region for the bipolar junction transistor
Author :
Dobrescu, D. ; Dobrescu, D. ; Rusu, A.
Author_Institution :
Fac. of Electron. & Telecommun., Bucharest Univ., Romania
Abstract :
This paper presents and studies new developed SPICE models for the breakdown region of the junction transistor biased in the common-emitter configuration. In such case, the output electrical characteristic has a negative slope, especially for very small or negative base currents
Keywords :
SPICE; bipolar transistors; negative resistance; semiconductor device breakdown; semiconductor device models; SPICE model; bipolar junction transistor; breakdown region; electrical characteristics; negative resistance; Bipolar transistors; Breakdown voltage; Electric breakdown; Electric resistance; Electric variables; Employee welfare; Equations; SPICE; Semiconductor device breakdown; Semiconductor devices;
Conference_Titel :
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-5235-1
DOI :
10.1109/ICMEL.2000.840555
