DocumentCode
351488
Title
The modification of drift-diffusion model for short base transport
Author
Karamarkovic, J.P. ; Jankovic, N.D. ; Dambacher, J.
Author_Institution
Fac. of Electron. Eng., Nis Univ., Serbia
Volume
1
fYear
2000
fDate
2000
Firstpage
209
Abstract
The results of modified drift-diffusion model have been compared with results obtained by Monte Carlo simulation. The modification of drift-diffusion model includes velocity overshoot value at the end of quasi-neutral base, and reduction of diffusion coefficient, introducing two fitting parameters. The obtained results show fairly good agreement with MC simulation results
Keywords
Monte Carlo methods; semiconductor device models; Monte Carlo simulation; bipolar semiconductor device; drift-diffusion model; quasi-neutral base; short base transport; velocity overshoot; Boundary conditions; Distribution functions; Electric variables; Equations; Monte Carlo methods; Scattering parameters; Semiconductor devices; Space charge; Thyristors; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location
Nis
Print_ISBN
0-7803-5235-1
Type
conf
DOI
10.1109/ICMEL.2000.840557
Filename
840557
Link To Document