Molecular layer epitaxy for future devices

Author

Kurabayashi, Tom ; Nishizawa, Jun-ichi

Author_Institution

Sendai Res. Center, Telecommun. Adv. Org., Japan

Volume

1

fYear

2000

fDate

2000

Firstpage

235

Abstract

Molecular layer epitaxies (MLE) of GaAs related compounds and Si with SiO₂ deposition has been developed to realize THz operating devices. At a lower process temperature than for conventional growth methods, device quality epitaxial layers were achieved by molecular layer epitaxy, In GaAs MLE, 100 Å scale static induction transistors are fabricated by MLE operating in a mixed ballistic-tunneling mode or in the pure tunneling mode. For device applications basic research in the fields of surface science and material science are studied

Keywords

III-V semiconductors; gallium arsenide; microwave field effect transistors; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; static induction transistors; tunnel transistors; 100 angstrom; GaAs; device quality epitaxial layers; mixed ballistic-tunneling mode; molecular layer epitaxy; pure tunneling mode; static induction transistors; Ash; Electrons; Epitaxial growth; Epitaxial layers; Fabrication; Gallium arsenide; Materials science and technology; Maximum likelihood estimation; Temperature; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2000. Proceedings. 2000 22nd International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-5235-1

Type

conf

DOI

10.1109/ICMEL.2000.840563

Filename

840563