مرکز منطقه ای اطلاع رساني علوم و فناوري - Self-organized growth of Si/Si and Ge<sub>x</sub>Si<sub>1-x</sub>/Si superlattices

DocumentCode :

351493

Title :

Self-organized growth of Si/Si and Ge_xSi_1-x/Si superlattices

Author :

Klimovskaya, A. ; Ostrovskii, I. ; Gule, E. ; Prokopenko, I.

Author_Institution :

Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine

Volume :

fYear :

2000

fDate :

2000

Firstpage :

239

Abstract :

Si/Si and Ge_xSi_1-x/Si superlattices were grown by vapour-transport reactions. Au and Pt were used to initiate self-organized growth of different “brushes”. A low of distribution and shape of growth peculiarities has been studied by electron microscopy

Keywords :

Ge-Si alloys; electron microscopy; elemental semiconductors; self-assembly; semiconductor materials; semiconductor superlattices; silicon; GeSi-Si; Si-Si; electron microscopy; self-organized growth; superlattices; vapour-transport reactions; Brushes; Gold; Ice; Integrated circuit technology; Shape; Silicon; Substrates; Superlattices; Temperature; Wires;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Microelectronics, 2000. Proceedings. 2000 22nd International Conference on

Conference_Location :

Nis

Print_ISBN :

0-7803-5235-1

Type :

conf

DOI :

10.1109/ICMEL.2000.840564

Filename :

840564

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=351493