Optical control of 1200-V and 20-A SiC MOSFET

Author

Meyer, Adam ; Mazumder, Sudip K. ; Riazmontazer, Hossein

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Illinois, Chicago, IL, USA

fYear

2012

fDate

5-9 Feb. 2012

Firstpage

2530

Lastpage

2533

Abstract

High-frequency characterization of an all-optical integrated 1200-V and 20-A SiC MOSFET driven by low-voltage GaAs optically-triggered power transistors (OTPTs) and realized in a high-temperature hybrid package is demonstrated in this paper. Experimental characterization results on the optical device are provided at device and converter levels. For the latter, a simple non-isolated 0.5 MHz boost converter was designed and implemented using the hybrid optical device. The device exhibits good switching performance and promise for high-frequency applications.

Keywords

III-V semiconductors; field effect transistor switches; gallium arsenide; optical control; optical switches; power MOSFET; power semiconductor switches; silicon compounds; switching convertors; wide band gap semiconductors; OTPT; SiC; SiC MOSFET; boost converter; current 20 A; frequency 0.5 MHz; high-temperature hybrid package; hybrid optical device; optical control; optically triggered power transistors; switching converter; voltage 1200 V; Hybrid power systems; Logic gates; Optical devices; Optical switches; Power MOSFET; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition (APEC), 2012 Twenty-Seventh Annual IEEE

Conference_Location

Orlando, FL

Print_ISBN

978-1-4577-1215-9

Electronic_ISBN

978-1-4577-1214-2

Type

conf

DOI

10.1109/APEC.2012.6166179

Filename

6166179