DocumentCode
351495
Title
High temperature treatment effect on wafers warpage with anodized porous silicon layers
Author
Ayvazyan, G.E. ; Vardanyan, A.A. ; Chomoyan, A.A. ; Makaryan, G.A.
Author_Institution
Div. of Mater. & Semicond. Devices, Transistor Co., Yerevan, Armenia
Volume
1
fYear
2000
fDate
2000
Firstpage
285
Abstract
The influence of high-temperature treatment from 800 to 1200°C in neutral atmosphere on the warpage of wafers with porous silicon (PS) layers has been investigated. We have shown that the warpage has an anisotropic nature and its magnitude depends on the regimes of forming a layer of PS and the subsequent heat treatment. The link between the wafers and the structural changes of the PS is discussed
Keywords
anodisation; crystal microstructure; elemental semiconductors; heat treatment; high-temperature effects; plastic deformation; porous semiconductors; silicon; 800 to 1200 C; Si; anisotropy; anodized porous silicon layers; heat treatment; high temperature treatment effect; neutral atmosphere; structural changes; wafer warpage; Anisotropic magnetoresistance; Annealing; Atmosphere; Atmospheric measurements; Capacitive sensors; Heat treatment; Hydrogen; Microstructure; Silicon; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location
Nis
Print_ISBN
0-7803-5235-1
Type
conf
DOI
10.1109/ICMEL.2000.840575
Filename
840575
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