Title :
High temperature treatment effect on wafers warpage with anodized porous silicon layers
Author :
Ayvazyan, G.E. ; Vardanyan, A.A. ; Chomoyan, A.A. ; Makaryan, G.A.
Author_Institution :
Div. of Mater. & Semicond. Devices, Transistor Co., Yerevan, Armenia
Abstract :
The influence of high-temperature treatment from 800 to 1200°C in neutral atmosphere on the warpage of wafers with porous silicon (PS) layers has been investigated. We have shown that the warpage has an anisotropic nature and its magnitude depends on the regimes of forming a layer of PS and the subsequent heat treatment. The link between the wafers and the structural changes of the PS is discussed
Keywords :
anodisation; crystal microstructure; elemental semiconductors; heat treatment; high-temperature effects; plastic deformation; porous semiconductors; silicon; 800 to 1200 C; Si; anisotropy; anodized porous silicon layers; heat treatment; high temperature treatment effect; neutral atmosphere; structural changes; wafer warpage; Anisotropic magnetoresistance; Annealing; Atmosphere; Atmospheric measurements; Capacitive sensors; Heat treatment; Hydrogen; Microstructure; Silicon; Temperature;
Conference_Titel :
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-5235-1
DOI :
10.1109/ICMEL.2000.840575
