Title :
Analysis of Fowler-Nordheim injection in NO nitrided gate oxide grown on n-type 4H-SiC
Author :
Li, Hui-feng ; Dimitrijev, Sima ; Sweatman, Denis ; Harrison, H.Barry
Author_Institution :
Sch. of Microelectron. Eng., Griffith Univ., Brisbane, Qld., Australia
Abstract :
F-N injection in NO nitrided gate oxides, grown on n-type 4H-SiC, has been investigated at room temperature and 300°C. The results show that NO nitridation has a positive effect on the Fowler-Nordheim electron injection at high electric fields. The electron injection barrier height is very close to the theoretical value at room temperature. The temperature dependence of the electron injection barrier height is reduced by nitridation
Keywords :
MIS structures; charge injection; nitridation; silicon compounds; wide band gap semiconductors; 20 C; 300 C; Fowler-Nordheim injection; MOS structure; NO; NO nitridation; SiC; electron injection barrier height; gate oxide; n-type 4H-SiC; temperature dependence; Current density; Electrons; MOS capacitors; Oxidation; Power engineering and energy; Silicon carbide; Substrates; Temperature dependence; Temperature measurement; Voltage;
Conference_Titel :
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-5235-1
DOI :
10.1109/ICMEL.2000.840582
