DocumentCode :
351502
Title :
The X-ray and UV controlled adjustment of MOSFET threshold voltage
Author :
Levin, M.N. ; Kadmensky, S.G. ; Pershenkov, V.S.
Author_Institution :
Voronezh State Univ., Russia
Volume :
1
fYear :
2000
fDate :
2000
Firstpage :
335
Abstract :
The technique for precise adjustment of MOS-devices threshold voltages using X-ray and UV irradiation is presented. The adjustment is based on formation of thermally stable charge in the phosphorus doped SiO2 layers
Keywords :
MOSFET; X-ray effects; ultraviolet radiation effects; MOSFET; SiO2:P; UV irradiation; X-ray irradiation; phosphorus doped SiO2 layer; thermally stable charge; threshold voltage; Annealing; CMOS process; Doping; Impurities; MOSFET circuits; Manufacturing processes; Temperature; Testing; Threshold voltage; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-5235-1
Type :
conf
DOI :
10.1109/ICMEL.2000.840583
Filename :
840583
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=351502
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