Title :
Effect of γ-irradiation on the electrophysical parameters of metal/GaAs barrier structures with textured interfaces
Author :
Borkovskaya, O.Yu. ; Dmitruk, N.L. ; Konakova, R.V. ; Mamykin, S.V. ; Milenin, V.V. ; Soloviev, E.A. ; Tagaev, M.B. ; Voitsikhovskiy, D.I.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
Abstract :
We investigated (i) morphology of the GaAs surface with a quasigrating-type microrelief and (ii) current flow mechanism in the Au/GaAs barrier structures formed on the above textured surface. Both Atomic Force Microscopy (AFM) and measurements of electrical (I-V and C-V) characteristics were used. We have found both semiconductor and interface parameters, as well as studied how they depend on 60Co γ-irradiation in the 103÷107 Gy dose range. The parameters measured were shown to be tolerant to such irradiation doses
Keywords :
III-V semiconductors; atomic force microscopy; gallium arsenide; gamma-ray effects; gold; semiconductor-metal boundaries; 1E3 to 1E7 Gy; GaAs-Au; atomic force microscopy; electrical characteristics; gamma irradiation; metal/semiconductor barrier structure; quasi-grating microrelief; surface morphology; textured interface; Atomic force microscopy; Capacitance-voltage characteristics; Gallium arsenide; Histograms; Pattern analysis; Performance analysis; Schottky diodes; Semiconductor diodes; Surface morphology; Surface texture;
Conference_Titel :
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-5235-1
DOI :
10.1109/ICMEL.2000.840591
