Effect of γ-irradiation on the electrophysical parameters of metal/GaAs barrier structures with textured interfaces

Author

Borkovskaya, O.Yu. ; Dmitruk, N.L. ; Konakova, R.V. ; Mamykin, S.V. ; Milenin, V.V. ; Soloviev, E.A. ; Tagaev, M.B. ; Voitsikhovskiy, D.I.

Author_Institution

Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine

Volume

1

fYear

2000

fDate

2000

Firstpage

367

Abstract

We investigated (i) morphology of the GaAs surface with a quasigrating-type microrelief and (ii) current flow mechanism in the Au/GaAs barrier structures formed on the above textured surface. Both Atomic Force Microscopy (AFM) and measurements of electrical (I-V and C-V) characteristics were used. We have found both semiconductor and interface parameters, as well as studied how they depend on ⁶⁰Co γ-irradiation in the 10³÷10⁷ Gy dose range. The parameters measured were shown to be tolerant to such irradiation doses

Keywords

III-V semiconductors; atomic force microscopy; gallium arsenide; gamma-ray effects; gold; semiconductor-metal boundaries; 1E3 to 1E7 Gy; GaAs-Au; atomic force microscopy; electrical characteristics; gamma irradiation; metal/semiconductor barrier structure; quasi-grating microrelief; surface morphology; textured interface; Atomic force microscopy; Capacitance-voltage characteristics; Gallium arsenide; Histograms; Pattern analysis; Performance analysis; Schottky diodes; Semiconductor diodes; Surface morphology; Surface texture;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2000. Proceedings. 2000 22nd International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-5235-1

Type

conf

DOI

10.1109/ICMEL.2000.840591

Filename

840591