• DocumentCode
    351508
  • Title

    Dielectric characteristics of MOS capacitors with rf sputtered Ta 2O5

  • Author

    Dimitrova, T. ; Atanassova, E. ; Koprinarova, J.

  • Author_Institution
    Inst. of Solid State Phys., Bulgarian Acad. of Sci., Sofia, Bulgaria
  • Volume
    1
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    373
  • Abstract
    The dielectric properties of Ta2O5/Si structures obtained by rf sputtering of Ta on p-Si in all Ar/O2 mixture have been investigated. It has been found that the the formation of an extremely thin SiO2 film at the interface between Si and Ta2O5 during rf sputtering is unavoidable and is an attribute of the fabrication process. This SiO2 layer influences significantly the dielectric and the breakdown characteristics of the structures. Optimal 15 conditions giving layers with a dielectric constant of 37 have been established. A correlation has been found between the effective dielectric constant of the layers and their breakdown strength
  • Keywords
    MOS capacitors; dielectric thin films; electric breakdown; permittivity; sputtered coatings; tantalum compounds; MOS capacitor; RF sputtering; SiO2 layer; Ta2O5-Si; Ta2O5/Si structure; breakdown strength; dielectric constant; Annealing; Argon; Dielectric breakdown; Dielectric constant; Fabrication; High-K gate dielectrics; MOS capacitors; Radio frequency; Semiconductor films; Sputtering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    0-7803-5235-1
  • Type

    conf

  • DOI
    10.1109/ICMEL.2000.840592
  • Filename
    840592
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=351508