• DocumentCode
    351510
  • Title

    Backside chip effect on latent relaxation in irradiated MOS devices

  • Author

    Emelianov, V.V. ; Meshurov, O.V. ; Pershenko, V.S. ; Cherepko, S.V.

  • Author_Institution
    Res. Inst. of Sci. Instrum., Moscow, Russia
  • Volume
    1
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    379
  • Abstract
    Latent interface trap build-up in MOS transistors is found to be governed by H2 diffusion through the silicon substrate. The main source of H2 is probably located on the back interface of the silicon wafer
  • Keywords
    MOSFET; X-ray effects; diffusion; electron beam effects; interface states; H2 diffusion; MOS transistor; X-ray irradiation; backside chip effect; electron irradiation; latent interface trap build-up; latent relaxation; silicon substrate; Annealing; Delay effects; Electron traps; Hydrogen; MOS devices; MOSFETs; Packaging; Silicon; Temperature; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    0-7803-5235-1
  • Type

    conf

  • DOI
    10.1109/ICMEL.2000.840594
  • Filename
    840594
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=351510