Nondestructive measurement of conductivity of doped GaAs using compact microwave instrument

Doped GaAs is the most important material in semiconductor industry. In this paper, we demonstrated a nondestructive method to measure the conductivity of GaAs wafers using a compact microwave instrument. In the experiment, 8 different GaAs wafers with thickness larger than 350 mum, and with resistivities in the range of 1.33 times 10^-3 Omegamiddotcm to 10.4 times 10^-3 Omegamiddotcm were measured. By using the intersection points of the evaluation curves obtained from known-resistivity wafer samples and the detected voltages for unknown-resistivity wafers, a nondestructive measurement method to determine the conductivity of GaAs wafer was realized. The measurement results are in agreement well with that obtained by using Hall effect measurement method.