Title :
A 26.8 dB Gain 19.7 dBm CMOS Power Amplifier Using 4-way Hybrid Coupling Combiner
Author :
Jiang-An Han ; Zhi-Hui Kong ; Kaixue Ma ; Kiat Seng Yeo
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
This letter presents a novel compact 4-way hybrid coupling combiner applied in an mm-wave CMOS power amplifier (PA) design with wideband, large output power and high gain. Basing on the principle of both series and parallel combination concurrently working in a concentric distributed active transformer, the size of a 4-way power combiner can be dramatically reduced. Using the proposed power combiner, a four-stage common source PA is implemented in 65 nm CMOS process. In each stage, inductive source degeneration is employed to enhance transistor stability without reducing maximum stable gain. The measurement results show that the PA can offer 26.8 dB linear gain with 3 dB bandwidth of 51-67 GHz. At 1.2 V/1.4 V external supply voltage, the PA is able to deliver 17.5 dBm/19.7 dBm Psat with 10.3%/13.4% power added efficiency (PAE). The chip size of the PA is only 0.32 mm2.
Keywords :
CMOS integrated circuits; coupled circuits; millimetre wave power amplifiers; power combiners; bandwidth 51 GHz to 67 GHz; common source PA; gain 26.8 dB; hybrid coupling combiner; inductive source degeneration; mm-wave CMOS power amplifier design; parallel combination; power combiner; series combination; size 0.32 mm; size 65 nm; voltage 1.2 V; voltage 1.4 V; CMOS integrated circuits; Couplings; Gain; Inductors; Power combiners; Power generation; Transistors; 4-way power combiner; V-band; hybrid coupling; power amplifier (PA); source degeneration;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2014.2365993