DocumentCode
3515416
Title
Transition rate in the InGaN quantum dot intermediate-band solar cell
Author
Wang, Kuang-Chung ; Wu, Yuh-Renn
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear
2012
fDate
3-8 June 2012
Abstract
This paper studies the feasibility of using GaN/InGaN quantum dot as the Intermediate Band Solar Cell. Different dot sizes and layers are compared and the result shows significant differences due to different quantum confinement strength. The band structure and transition rate in the quantum dot are calculated. The efficiency of the structure can reach 31% in this structure. With these information, we hope to provide guidance to experimentalists for design of InGaN intermediate band solar cell.
Keywords
III-V semiconductors; band structure; gallium compounds; indium compounds; semiconductor quantum dots; solar cells; wide band gap semiconductors; GaN-InGaN; band structure; quantum confinement strength; quantum dot intermediate-band solar cell; transition rate; Absorption; Gallium nitride; Materials; Photonics; Photovoltaic cells; Quantum dots; Strain; InGaN; Intermediate band solar cell; quantum dot; transition rate;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location
Austin, TX
ISSN
0160-8371
Print_ISBN
978-1-4673-0064-3
Type
conf
DOI
10.1109/PVSC.2012.6317730
Filename
6317730
Link To Document