Title :
Transition rate in the InGaN quantum dot intermediate-band solar cell
Author :
Wang, Kuang-Chung ; Wu, Yuh-Renn
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
This paper studies the feasibility of using GaN/InGaN quantum dot as the Intermediate Band Solar Cell. Different dot sizes and layers are compared and the result shows significant differences due to different quantum confinement strength. The band structure and transition rate in the quantum dot are calculated. The efficiency of the structure can reach 31% in this structure. With these information, we hope to provide guidance to experimentalists for design of InGaN intermediate band solar cell.
Keywords :
III-V semiconductors; band structure; gallium compounds; indium compounds; semiconductor quantum dots; solar cells; wide band gap semiconductors; GaN-InGaN; band structure; quantum confinement strength; quantum dot intermediate-band solar cell; transition rate; Absorption; Gallium nitride; Materials; Photonics; Photovoltaic cells; Quantum dots; Strain; InGaN; Intermediate band solar cell; quantum dot; transition rate;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-0064-3
DOI :
10.1109/PVSC.2012.6317730
