Source technologies for extreme ultraviolet lithography

Author

Kubiak, G.D.

Author_Institution

Sandia Nat. Labs., Livermore, CA, USA

fYear

1998

fDate

3-8 May 1998

Firstpage

85

Abstract

Summary form only given. Extreme ultraviolet lithography (EUVL) is being developed for the production of integrated circuits with critical dimension (CD) 0.1 /spl mu/m EUVL employs all-reflective projection optical systems at exposure wavelengths in the 11-13 nm spectral region. An overview of EUVL is presented, and recent progress in the most demanding component technologies is summarized. One of these components is the source, which must produce 30-40 W of inband EUV radiation without damaging nearby condenser optical elements.

Keywords

X-ray lithography; photolithography; plasma applications; plasma production by laser; 30 to 40 W; all-reflective projection optical systems; component technologies; condenser optical elements; critical dimension; exposure wavelengths; extreme ultraviolet lithography; inband EUV radiation; integrated circuit production; overview; source technologies; Breast; Gas lasers; Integrated circuit technology; Laboratories; Lithography; Optical attenuators; Optical scattering; Plasma sources; Ultraviolet sources; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.675901

Filename

675901