Effects of annealing in sulfur vapor on electrodeposited CuInSe2 films

Author

Bhatia, A. ; Karmarkar, M.A. ; Meadows, H. ; Hymas, M.C. ; Smith, E.M. ; Dale, P.J. ; Scarpulla, M.A.

Author_Institution

Mater. Sci. & Eng., Univ. of Utah, Salt Lake City, UT, USA

fYear

2012

fDate

3-8 June 2012

Abstract

In this work we investigate the effects of annealing in sulfur vapor on electrodeposited (ED) CISe films. X-ray diffraction measurement of the as-ED samples show broad peaks in θ-2θ scans. The full width at half maximum (FWHM) of the XRD (112) peak decreases following annealing in sulfur indicating improved crystalline quality and grain growth. Raman spectroscopy shows different dominant vibrational modes for samples with low and high S contents. We have also measured the electrical properties such as J-V, impedance spectroscopy and thermal admittance spectroscopy (TAS) of the samples. The J-V and impedance characteristics suggest deterioration of electrical properties for high S content samples. TAS measurements suggest that high S content causes a distribution of trap states instead of a discrete state in the samples.

Keywords

Raman spectra; X-ray diffraction; annealing; copper compounds; electrodeposits; grain growth; indium compounds; semiconductor growth; semiconductor thin films; ternary semiconductors; CuInSe₂; J-V spectroscopy; Raman spectroscopy; X-ray diffraction measurement; annealing; crystalline quality; dominant vibrational modes; electrical properties; electrodeposited CISe films; grain growth; impedance spectroscopy; sulfur vapor; thermal admittance spectroscopy; Annealing; Current measurement; Heating; Impedance; Metals; Spectroscopy; Temperature measurement; CuIn(SeS)2; impedance spectroscopy; thermal admittance spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE

Conference_Location

Austin, TX

ISSN

0160-8371

Print_ISBN

978-1-4673-0064-3

Type

conf

DOI

10.1109/PVSC.2012.6317742

Filename

6317742