Title :
Replacing linear Hamming codes by robust nonlinear codes results in a reliability improvement of memories
Author :
Wang, Zhen ; Karpovsky, Mark G. ; Kulikowski, Konrad J.
Author_Institution :
Reliable Comput. Lab., Boston Univ., Boston, MA, USA
fDate :
June 29 2009-July 2 2009
Abstract :
Linear single-error-correcting, double-error-detecting (SEC-DED) codes used in the design of reliable memories cannot detect and can miscorrect errors with large Hamming weights. We propose protection for memory devices based on extended Vasil´ev codes. These nonlinear SECDED codes have a minimum distance of four, fewer undetectable errors and fewer errors that are miscorrected than linear codes with the same dimension and redundancy. The extended Vasil´ev codes can provide for higher reliability in the presence of repeating errors or high rate of multibitupsets. As far as we know, our paper is the only one discussing application of efficient nonlinear codes for design of reliable memories. The proposed approach can be applied to RAM, ROM, FLASH and disk memories with relatively low hardware overhead.
Keywords :
Hamming codes; flash memories; nonlinear codes; random-access storage; reliability; Vasilev codes; double-error-detecting code; linear Hamming code; memory device; nonlinear code; single-error-correcting code; Error correction codes; Hardware; Interleaved codes; Linear code; Neutrons; Nonlinear distortion; Protection; Random access memory; Robustness; Single event transient;
Conference_Titel :
Dependable Systems & Networks, 2009. DSN '09. IEEE/IFIP International Conference on
Conference_Location :
Lisbon
Print_ISBN :
978-1-4244-4422-9
Electronic_ISBN :
978-1-4244-4421-2
DOI :
10.1109/DSN.2009.5270297