• DocumentCode
    3515787
  • Title

    Replacing linear Hamming codes by robust nonlinear codes results in a reliability improvement of memories

  • Author

    Wang, Zhen ; Karpovsky, Mark G. ; Kulikowski, Konrad J.

  • Author_Institution
    Reliable Comput. Lab., Boston Univ., Boston, MA, USA
  • fYear
    2009
  • fDate
    June 29 2009-July 2 2009
  • Firstpage
    514
  • Lastpage
    523
  • Abstract
    Linear single-error-correcting, double-error-detecting (SEC-DED) codes used in the design of reliable memories cannot detect and can miscorrect errors with large Hamming weights. We propose protection for memory devices based on extended Vasil´ev codes. These nonlinear SECDED codes have a minimum distance of four, fewer undetectable errors and fewer errors that are miscorrected than linear codes with the same dimension and redundancy. The extended Vasil´ev codes can provide for higher reliability in the presence of repeating errors or high rate of multibitupsets. As far as we know, our paper is the only one discussing application of efficient nonlinear codes for design of reliable memories. The proposed approach can be applied to RAM, ROM, FLASH and disk memories with relatively low hardware overhead.
  • Keywords
    Hamming codes; flash memories; nonlinear codes; random-access storage; reliability; Vasilev codes; double-error-detecting code; linear Hamming code; memory device; nonlinear code; single-error-correcting code; Error correction codes; Hardware; Interleaved codes; Linear code; Neutrons; Nonlinear distortion; Protection; Random access memory; Robustness; Single event transient;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Dependable Systems & Networks, 2009. DSN '09. IEEE/IFIP International Conference on
  • Conference_Location
    Lisbon
  • Print_ISBN
    978-1-4244-4422-9
  • Electronic_ISBN
    978-1-4244-4421-2
  • Type

    conf

  • DOI
    10.1109/DSN.2009.5270297
  • Filename
    5270297