Deep level transient spectroscopy of hole emission from nitrided oxide/silicon interface traps

Author

Poon, Y.H. ; Wong, H. ; Man, K.F.

Author_Institution

Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon, Hong Kong

fYear

1996

fDate

35245

Firstpage

81

Lastpage

86

Abstract

The interface hole trap distribution in nitrided oxide (NOX), re-oxidized nitrided oxide (RNOX), and thermal oxide are studied and are compared in detail utilizing the deep level transient spectroscopy (DLTS) measurement. Results show that nitrided oxides have larger amount of hole traps than the thermal oxide. Most of the hole trapping centers in NOX layers are due to the oxygen deficiency as a result of oxygen removal during the nitridation. For RNOX sample, the amount oxygen deficiency centers are reduced by re-oxidation and the non-bridging oxygen could be a major source of hole traps. In addition, we found that the hole emissions of the trapping centers in NOX and RNOX samples also follow the lattice relaxation multiphonon emission model as used in thermal oxide

Keywords

deep level transient spectroscopy; hole traps; nitridation; semiconductor-insulator boundaries; silicon; DLTS measurement; NOX layers; O deficiency; RNOX sample; SiNO-Si; deep level transient spectroscopy; hole emission; interface hole trap distribution; lattice relaxation multiphonon emission model; nitrided oxide/Si interface traps; re-oxidation; re-oxidized nitrided oxide; thermal oxide; Annealing; Density measurement; Dielectrics and electrical insulation; Electron traps; Energy measurement; Lattices; Oxidation; Silicon; Spectroscopy; Thermal engineering;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996., IEEE Hong Kong

Print_ISBN

0-7803-3091-9

Type

conf

DOI

10.1109/HKEDM.1996.566321

Filename

566321