High power uni-traveling-carrier photodiodes

Author

Ishibashi, Tadao ; Fushimi, Hiroshi ; Ito, Hiroshi ; Furuta, Tomofumi

Author_Institution

NTT Photonics Labs., Kanagawa, Japan

fYear

1999

fDate

1999

Firstpage

75

Abstract

Photoresponse characteristics of InP-InGaAs UTC-PDs and their potential as high power devices are discussed. A fabricated UTC-PD with an InGaAs absorption-layer thickness W_A of 220 nm and a collection-layer depletion thickness W_C of 300 nm yielded high pulse-photocurrent up to 184 mA with an associated FWHM of 4.8 ps for a junction area of 40 μm². A comparison of the optical RF response between UTC-PDs and conventional pin PDs has shown higher output capability of the UTC-PD at low bias

Keywords

III-V semiconductors; gallium arsenide; indium compounds; microwave photonics; photoconductivity; photodiodes; 184 mA; 220 nm; 300 nm; 4.8 ps; InGaAs absorption-layer thickness; InP-InGaAs; InP/InGaAs UTC-PDs; collection-layer depletion thickness; high power devices; high power uni-traveling-carrier photodiodes; high pulse-photocurrent; junction area; low bias; optical RF response; output capability; photoresponse characteristics; pin PDs; Absorption; Bandwidth; Charge carrier processes; Electron mobility; Indium gallium arsenide; Indium phosphide; Optical pulses; Optical saturation; Photodiodes; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Photonics, 1999. MWP '99. International Topical Meeting on

Conference_Location

Melbourne, Vic.

Print_ISBN

0-7803-5558-X

Type

conf

DOI

10.1109/MWP.1999.819655

Filename

819655