• DocumentCode
    351582
  • Title

    Structure and morphology of thin Al-layers in resonator´s systems after rapid thermal annealing

  • Author

    Spassov, L. ; Georgieva, K. ; Marinov, M.

  • Author_Institution
    Inst. of Solid State Phys., Bulgarian Acad. of Sci., Sofia, Bulgaria
  • Volume
    1
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    481
  • Abstract
    The aim of this paper is the study of structure and morphology of Al-layers after rapid thermal annealing (RTA). Al-layers with thickness of 120 nm are prepared on quartz substrates AT-cut. The films are deposited by four different methods: thermal vacuum evaporation, DC magnetron sputtering, RF sputtering and E-beam evaporation. Obtained samples are subjected to RTA in vacuum 6.66.10-3 Pa. The temperature of the heater is changed from 700°C to 800°C for duration of 5s to 180s. The structural and morphological investigations of the Al layers are carried out by Reflection High-Energy Electron Diffraction (RHEED) with an accelerating voltage of 50 kV and Scanning Electron Microscopy (SEM) on JSM-5300. The morphology and the structure of as-deposited layers are registered. It is established that these two characteristics are varied and depend on the method of deposition. The changes which take place as a result of RTA treatment are studied. The influence of RTA-parameters on morphology and structure depends on the initial state of the layers and can be affected by different grades
  • Keywords
    aluminium; crystal morphology; crystal resonators; electrodes; metallic thin films; quartz; rapid thermal annealing; reflection high energy electron diffraction; scanning electron microscopy; sputtered coatings; surface structure; vacuum deposited coatings; vapour deposited coatings; 120 nm; 5 to 180 s; 6.66E-3 Pa; 700 to 800 C; AT-cut; Al; Al-SiO2; DC magnetron sputtering; E-beam evaporation; RF sputtering; RHEED; RTA parameters; SEM; SiO2; deposition methods; electrode material; morphology; polycrystalline layer; quartz substrates; rapid thermal annealing; recrystallization process; reflection high-energy electron diffraction; resonator systems; scanning electron microscopy; surface structure; thermal vacuum evaporation; thin Al films; Acceleration; Diffraction; Morphology; Radio frequency; Rapid thermal annealing; Reflection; Scanning electron microscopy; Sputtering; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Frequency and Time Forum, 1999 and the IEEE International Frequency Control Symposium, 1999., Proceedings of the 1999 Joint Meeting of the European
  • Conference_Location
    Besancon
  • ISSN
    1075-6787
  • Print_ISBN
    0-7803-5400-1
  • Type

    conf

  • DOI
    10.1109/FREQ.1999.840811
  • Filename
    840811