DocumentCode
3515992
Title
Analysis of tandem III–V/SiGe devices grown on Si
Author
Schmieder, Kenneth J. ; Gerger, Andrew ; Diaz, Martin ; Pulwin, Ziggy ; Ebert, Chris ; Lochtefeld, Anthony ; Opila, Robert ; Barnett, Allen
Author_Institution
Univ. of Delaware, Newark, DE, USA
fYear
2012
fDate
3-8 June 2012
Abstract
This paper introduces the modeling developed to assess the potential of a III-V/SiGe tandem device. Demonstration of value will be executed via materials and solar cell device models. III-V top cell candidates are evaluated and a high-value composition is identified. Initial windowless GaAsP solar cells demonstrate a bandgap-voltage offset of 0.58.
Keywords
Ge-Si alloys; III-V semiconductors; gallium arsenide; semiconductor growth; semiconductor materials; solar cells; GaAsP; Si; SiGe; bandgap-voltage offset; high-value composition; solar cell device models; tandem device; Photonic band gap; Photonics; Photovoltaic cells; Silicon; Silicon germanium; Substrates; III–V semiconductor materials; photovoltaic cells; semiconductor device modeling; semiconductor growth;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location
Austin, TX
ISSN
0160-8371
Print_ISBN
978-1-4673-0064-3
Type
conf
DOI
10.1109/PVSC.2012.6317764
Filename
6317764
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