Title :
Failure of effective-channel length extraction methods due to the effect of the relative doping level of source and drain in short-channel LDD MOSFETs
Author :
Latif, Z. ; Ortiz-Conde, A. ; Liou, J.J. ; Sánchez, F. J García ; Wong, W.
Author_Institution :
Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA
Abstract :
Device simulations with MEDICI are carried out to examine the validity of the widely used methods for extracting the effective channel length in LDD MOSFETs. Our results show that Terada´s method fails in LDD MOSFETs when the doping levels are comparable at both sides of each drain-body and source-body junction. Similar failure is also observed in conventional MOSFETs (without LDD) under analogous doping concentration conditions
Keywords :
MOSFET; doping profiles; semiconductor device models; MEDICI; device simulations; doping concentration conditions; drain doping; effective-channel length extraction methods; lightly doped drain; relative doping level; short-channel LDD MOSFETs; source doping; Charge carrier density; Doping profiles; Educational institutions; Electric variables; Length measurement; MOSFETs; Medical simulation; Silicon; Threshold voltage; Time division multiplexing;
Conference_Titel :
Electron Devices Meeting, 1996., IEEE Hong Kong
Print_ISBN :
0-7803-3091-9
DOI :
10.1109/HKEDM.1996.566323
