• DocumentCode
    3516231
  • Title

    Full area laser doped boron emitter silicon solar cells

  • Author

    Dahlinger, M. ; Eisele, S.J. ; Lill, P.C. ; Köhler, J.R. ; Werner, J.H.

  • Author_Institution
    Inst. fur Photovoltaik (ipv), Univ. of Stuttgart, Stuttgart, Germany
  • fYear
    2012
  • fDate
    3-8 June 2012
  • Abstract
    We present full area laser doped boron emitter n-type silicon solar cells using sputtered boron as dopant source. Quasi-steady-state photo conductance decay measurements show a low emitter saturation current density J0e and an open circuit voltage limit of Voc,lim 702 mV for a 128 Ω/sq emitter proving the high quality of the laser doped boron emitters. The first 4 cm2 cell yield efficiencies up to η= 16.7% without optimization of the cell structure.
  • Keywords
    boron; elemental semiconductors; laser materials processing; semiconductor doping; silicon; solar cells; sputtering; Si:B; dopant source; full area laser doped boron emitter; low emitter saturation; quasi steady-state photo conductance decay; solar cells; sputtered boron; voltage 702 mV; Boron; Doping; Measurement by laser beam; Photovoltaic cells; Resistance; Silicon; Surface emitting lasers; boron; laser doping; n-Type; silicon; sputtering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
  • Conference_Location
    Austin, TX
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4673-0064-3
  • Type

    conf

  • DOI
    10.1109/PVSC.2012.6317778
  • Filename
    6317778
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3516231