DocumentCode :
3516231
Title :
Full area laser doped boron emitter silicon solar cells
Author :
Dahlinger, M. ; Eisele, S.J. ; Lill, P.C. ; Köhler, J.R. ; Werner, J.H.
Author_Institution :
Inst. fur Photovoltaik (ipv), Univ. of Stuttgart, Stuttgart, Germany
fYear :
2012
fDate :
3-8 June 2012
Abstract :
We present full area laser doped boron emitter n-type silicon solar cells using sputtered boron as dopant source. Quasi-steady-state photo conductance decay measurements show a low emitter saturation current density J0e and an open circuit voltage limit of Voc,lim 702 mV for a 128 Ω/sq emitter proving the high quality of the laser doped boron emitters. The first 4 cm2 cell yield efficiencies up to η= 16.7% without optimization of the cell structure.
Keywords :
boron; elemental semiconductors; laser materials processing; semiconductor doping; silicon; solar cells; sputtering; Si:B; dopant source; full area laser doped boron emitter; low emitter saturation; quasi steady-state photo conductance decay; solar cells; sputtered boron; voltage 702 mV; Boron; Doping; Measurement by laser beam; Photovoltaic cells; Resistance; Silicon; Surface emitting lasers; boron; laser doping; n-Type; silicon; sputtering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
ISSN :
0160-8371
Print_ISBN :
978-1-4673-0064-3
Type :
conf
DOI :
10.1109/PVSC.2012.6317778
Filename :
6317778
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3516231
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