DocumentCode
3516365
Title
Improvement of short wavelength optical response by applying multi SiNx:H layers on mono crystalline silicon solar cells
Author
Kim, Kihyun ; Oh, Hoon ; Lim, Jongbin ; Heo, Jongkyu ; Yang, Sumi ; Oh, Younghyun ; Hwang, MyungIck ; Cho, Eunchel
Author_Institution
Green Energy Bus. Div., Hyundai Heavy Ind., Co., Ltd., Eumseong, South Korea
fYear
2012
fDate
3-8 June 2012
Abstract
Hydrogen containing silicon nitride film (SiNx:H) is used in most commercial crystalline silicon solar cells as anti-reflection coating and passivation layer. In this study, we have fabricated anti-reflection coating layers which are composed of multi SiNx:H films for mono crystalline silicon solar cell by Plasma Enhanced Chemical Vapor Deposition (PECVD). For high efficiency solar cells, we deposited those layers on various process conditions and compared the reflectance of SiNx:H layer with that of multi SiNx:H layer. Consequently, we optimized deposition condition for multi SiNx:H layer and manufactured black solar cell with a very low reflectance. From these results, we can expect to increase productivity by decreasing processing time. For the characterization of manufactured cell, ellipsometer, quantum efficiency (QE) analyzer and reflecto-meter were used.
Keywords
antireflection coatings; elemental semiconductors; hydrogen; passivation; plasma CVD; silicon; silicon compounds; solar cells; QE analyzer; SiNx:H; antireflection coating layer; ellipsometer; manufactured black solar cell; monocrystalline silicon solar cells; optimized deposition condition; passivation layer; plasma enhanced chemical vapor deposition; quantum efficiency analyzer; reflectometer; short wavelength optical response; Coatings; Indexes; Plasma properties; Reflection; Refractive index; anti-reflection coating; crystalline silicon solar cells; double SiNx:H layer; multi SiNx:H layer; passivation; quantum efficiency (QE); reflectance;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location
Austin, TX
ISSN
0160-8371
Print_ISBN
978-1-4673-0064-3
Type
conf
DOI
10.1109/PVSC.2012.6317786
Filename
6317786
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