Modelling of NPN Bipolar Junction Transistor Characteristics Using Gummel Plot Technique

In this paper, electrical characteristics of bipolar junction transistor (BJT) are studied by using Gummel plot focusing on gain. The investigation has been carried out by using SILVACO Software tool, 6 cases of different doping concentration for base and emitter have been carried out to determine the best concentration that will produce large gain. It can be conclude that emitter doping concentration equal to 3e15cm^-3 and base doping concentration equal to 1.5e15cm^-3 manage to produce common-emitter current gain ß = 103, common-base current gain ¿ =0.99, unity current gain frequency fT = 6766.34MHz, peak collector current = 0.316mA and breakdown voltage = 6V.