• DocumentCode
    3516722
  • Title

    18.8 % efficient laser-doped semiconductor fingers screen-printed silicon solar cell with light-induced plating

  • Author

    Wang, Kee Soon ; Lin, Dong ; An, Xin Rui ; Mai, Ly ; Mitchell, Emily ; Wenham, Stuart R.

  • Author_Institution
    Sch. of Photovoltaic & Renewable Energy Eng., Univ. of New South Wales, Sydney, NSW, Australia
  • fYear
    2012
  • fDate
    3-8 June 2012
  • Abstract
    The practical realization of high efficiency laser-doped semiconductor fingers (SCF) silicon solar cell is inhibited by high contact resistance. By plating the SCF with metal, a new SCF cell concept known as the “Advanced SCF” (AdvSCF) cell that can resolve the contact resistance problem is presented. In the first AdvSCF cells demonstrated in this work, the nickel (Ni) plating coverage across the cell was found to be non-uniform with Ni voids mostly concentrated around the busbar. This was found to be avoidable by ensuring that the spin-on phosphoric acid dopant layer was uniformly thick across the whole cell area and especially at the busbar. With uniform Ni plating coverage achieved, in a batch of 6 AdvSCF cells, an average batch efficiency of 18.40 % was achieved with the highest at 18.82 %. This was achieved without any experimental optimization of the front grid design or other cell properties, implying that there is potential to achieve significantly higher efficiency levels.
  • Keywords
    elemental semiconductors; nickel; semiconductor doping; semiconductor lasers; silicon; solar cells; AdvSCF cell; SCF silicon solar cell; Si; advanced SCF cell; cell properties; contact resistance; efficiency 18.8 percent; efficiency 18.82 percent; experimental optimization; front grid design; laser-doped semiconductor finger screen-printed silicon solar cell; light-induced plating; nickel plating coverage; spin-on phosphoric acid dopant layer; Fingers; Nickel; Photovoltaic cells; Resistance; Silicon; Surface emitting lasers; laser doping; photovoltaic cells; plating; screen printing; selective emitter; semiconductor fingers; silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
  • Conference_Location
    Austin, TX
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4673-0064-3
  • Type

    conf

  • DOI
    10.1109/PVSC.2012.6317805
  • Filename
    6317805