DocumentCode :
3516722
Title :
18.8 % efficient laser-doped semiconductor fingers screen-printed silicon solar cell with light-induced plating
Author :
Wang, Kee Soon ; Lin, Dong ; An, Xin Rui ; Mai, Ly ; Mitchell, Emily ; Wenham, Stuart R.
Author_Institution :
Sch. of Photovoltaic & Renewable Energy Eng., Univ. of New South Wales, Sydney, NSW, Australia
fYear :
2012
fDate :
3-8 June 2012
Abstract :
The practical realization of high efficiency laser-doped semiconductor fingers (SCF) silicon solar cell is inhibited by high contact resistance. By plating the SCF with metal, a new SCF cell concept known as the “Advanced SCF” (AdvSCF) cell that can resolve the contact resistance problem is presented. In the first AdvSCF cells demonstrated in this work, the nickel (Ni) plating coverage across the cell was found to be non-uniform with Ni voids mostly concentrated around the busbar. This was found to be avoidable by ensuring that the spin-on phosphoric acid dopant layer was uniformly thick across the whole cell area and especially at the busbar. With uniform Ni plating coverage achieved, in a batch of 6 AdvSCF cells, an average batch efficiency of 18.40 % was achieved with the highest at 18.82 %. This was achieved without any experimental optimization of the front grid design or other cell properties, implying that there is potential to achieve significantly higher efficiency levels.
Keywords :
elemental semiconductors; nickel; semiconductor doping; semiconductor lasers; silicon; solar cells; AdvSCF cell; SCF silicon solar cell; Si; advanced SCF cell; cell properties; contact resistance; efficiency 18.8 percent; efficiency 18.82 percent; experimental optimization; front grid design; laser-doped semiconductor finger screen-printed silicon solar cell; light-induced plating; nickel plating coverage; spin-on phosphoric acid dopant layer; Fingers; Nickel; Photovoltaic cells; Resistance; Silicon; Surface emitting lasers; laser doping; photovoltaic cells; plating; screen printing; selective emitter; semiconductor fingers; silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
ISSN :
0160-8371
Print_ISBN :
978-1-4673-0064-3
Type :
conf
DOI :
10.1109/PVSC.2012.6317805
Filename :
6317805
Link To Document :
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