Title :
Si thin film solar cell with asymmetric p-n junction
Author :
Ko, Myung-Dong ; Baek, Chang-Ki ; Rim, Taiuk ; Park, Sooyoung ; Jeong, Yoon-Ha
Author_Institution :
Dept. of Electr. Eng., POSTECH, Pohang, South Korea
Abstract :
We propose an asymmetric structure using simulation to improve the electrical characteristics of the solar cell. This structure is designed by shrinking the bottom core diameter in radial structure. It causes the total reflection of the incident light in the outer wall and the light concentration in the bottom core. Consequently, an asymmetric solar cell (ASC) shows the increase in current density and cell efficiency (CE), which is 10 % higher than those of a symmetric solar cell (SSC). By increasing doping concentration of the shell and applying light trapping techniques i.e. anti-reflective coating and back-surface-field, the ASC showed high CE compared with the SSC. This novel structure offers an opportunity for effectively improving the CE.
Keywords :
antireflection coatings; elemental semiconductors; light reflection; radiation pressure; semiconductor thin films; silicon; solar cells; anti-reflective coating; asymmetric p-n junction; asymmetric solar cell; asymmetric structure; back-surface-field; cell efficiency; current density; doping concentration; electrical characteristics; incident light total reflection; light concentration; light trapping techniques; radial structure; thin film solar cell; Absorption; Films; Indexes; Nanostructures; Photovoltaic systems; Physics; Silicon; asymmetric solar cell; photovoltaic devices; radial p-n junction; sentaurus device simulator; silicon nanowire;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-0064-3
DOI :
10.1109/PVSC.2012.6317820
