Title :
Fabrication of site specific amorphous/nanocrystalline silicon composite thin film for solar cells
Author :
Newton, Ben ; Safe, Abu H. ; Benemara, M. ; Yu, Son-Cheol ; Naseem, Hameed
Author_Institution :
Microelectron. Photonics Program, Univ. of Arkansas, Fayetteville, AR, USA
Abstract :
The absorption properties of amorphous silicon (α-Si) and the electron transport properties of nanocrystalline silicon are combined in a novel composite material for thin film silicon solar cells. In this work a composite film composed of α-Si with site specific areas of nanocrystalline material was created. Al was deposited through a SiO2 template containing nanometer sized apertures with an approximate diameter of 250 nm onto an α-Si film supported by a <;100>; crystalline silicon substrate. It was then annealed at 350°C. The annealing caused crystallization only at sites where the Al was in contact with the α-Si surface. The AIC created site specific three dimensional nanocrystalline structures embedded in a thin film of α-Si. After grain boundary passivation these nanocrystalline sites will provide pathways for charge carriers that are less defect dense than the α-Si film. TEM samples were fabricated from the composite film utilizing the focus ion beam. The growth characteristics of these 3D nanostructures and the α-Si thin film were characterized utilizing ESEM and the TEM.
Keywords :
absorption; aluminium; amorphous semiconductors; annealing; elemental semiconductors; focused ion beam technology; grain boundaries; nanocomposites; passivation; scanning electron microscopy; semiconductor thin films; silicon; silicon compounds; solar cells; transmission electron microscopy; 3D nanostructures; Al; ESEM; Si; SiO2; TEM samples; absorption properties; charge carriers; crystallization; electron transport property; focus ion beam; grain boundary passivation; nanocrystalline material; nanocrystalline silicon composite thin film fabrication; nanometer sized apertures; site specific amorphous silicon composite fabrication; temperature 350 degC; thin film silicon solar cells; three dimensional nanocrystalline structures; Annealing; Measurement uncertainty; Platinum; Substrates; USA Councils; Valves; amorphous materials; nanocrystals; nanofabrication; nanotechnology; thin film devices;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-0064-3
DOI :
10.1109/PVSC.2012.6317822