Amorphous InZnO transparent conductors for c-Si/a-Si heterojunction PV

Author

Perkins, J.D. ; Gennett, T. ; Grover, S. ; Young, D.L. ; Ginley, D.S. ; Teplin, C.W.

Author_Institution

Nat. Renewable Energy Lab., Golden, CO, USA

fYear

2012

fDate

3-8 June 2012

Abstract

Amorphous InZnO (a-IZO) thin film transparent conductors have opto-electronic properties comparable to those of indium-tin-oxide (ITO). To test the performance of a-IZO in actual devices, we fabricate epitaxial film c-Si/a-Si heterojunction solar cells on heavily doped, electronically dead silicon wafers using both a-IZO and reactive evaporated ITO as the transparent conducting oxide (TCO). The best a-IZO and ITO reference solar cells have similar efficiencies, 6.2% for the a-IZO device and 6.0% with ITO.

Keywords

II-VI semiconductors; amorphous semiconductors; elemental semiconductors; indium compounds; semiconductor epitaxial layers; semiconductor heterojunctions; semiconductor thin films; silicon; solar cells; tin compounds; wide band gap semiconductors; zinc compounds; ITO; ITO reference solar cells; InZnO; Si; TCO; amorphous thin film transparent conductors; efficiency 6.0 percent; efficiency 6.2 percent; electronically dead silicon wafers; epitaxial film heterojunction solar cells; heterojunction PV cell; optoelectronic properties; reactive evaporated ITO; transparent conducting oxide; Conductivity; Epitaxial growth; Heterojunctions; Indium tin oxide; Photovoltaic cells; Silicon; IZO; a-InZnO; amorphous TCO; film silicon; photovoltaic cells;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE

Conference_Location

Austin, TX

ISSN

0160-8371

Print_ISBN

978-1-4673-0064-3

Type

conf

DOI

10.1109/PVSC.2012.6317824

Filename

6317824