Modeling and Analysis Method for Radiation-Induced Upsets in Modern IC Device Models

Author

Francis, Matt ; Dimitrov, Dimitre ; Holmes, James ; Mantooth, Alan

Author_Institution

Arkansas Univ., Fayetteville, AR

fYear

2008

fDate

1-8 March 2008

Firstpage

1

Lastpage

10

Abstract

As the demand for complex functions to be performed in harsh environments such as space applications converges with continually diminishing IC feature sizes, the traditional methods of circuit design and evaluation break down. The traditional IC design flow is mostly concerned with electrical interactions, in some cases considering power and thermal effects. Proposed is a method for integrating radiation expertise into this traditional IC flow. Specifically, the effect of ionizing radiation upon transient performance of digital and analog circuits is targeted.

Keywords

integrated circuit design; integrated circuit modelling; radiation effects; analog circuits; complex functions; digital circuits; integrated circuit design flow; integrated circuit device models; power effects; radiation-induced upsets; space applications; thermal effects; Application specific integrated circuits; Digital integrated circuits; Integrated circuit modeling; Ionizing radiation; MOSFET circuits; Performance evaluation; Physics; RLC circuits; Single event transient; Single event upset;

fLanguage

English

Publisher

ieee

Conference_Titel

Aerospace Conference, 2008 IEEE

Conference_Location

Big Sky, MT

ISSN

1095-323X

Print_ISBN

978-1-4244-1487-1

Electronic_ISBN

1095-323X

Type

conf

DOI

10.1109/AERO.2008.4526685

Filename

4526685