A 10k-Cycling Reliable 90nm Logic NVM "eCFlash" (Embedded CMOS Flash) Technology

This paper describes a 90nm Logic NVM "eCFlash", which can be embedded in standard CMOS process without any mask adder and any process modification. In the eCFlash element, the charge is stored in the side spacer region of CMOS transistor, consequently its charge loss process is not influenced by the leakage current through the gate oxide and surface leakage current on the side spacer, which is the most serious charge loss issues of the conventional single poly type floating gate NVM. It is shown that the intrinsic retention capability of 90nm eCFlash element is more than 10 years at 125C after 10k cycling.