Title :
Characterization and Physical Modeling of Endurance in Embedded Non-Volatile Memory Technology
Author :
Garetto, Davide ; Zaka, Alban ; Manceau, Jean-Philippe ; Rideau, Denis ; Dornel, Erwan ; Clark, William F. ; Schmid, Alexandre ; Jaouen, Hervé ; Leblebici, Yusuf
Author_Institution :
IBM France, Crolles, France
Abstract :
Transient and endurance mechanisms in high performance embedded non-volatile memory flash devices are investigated in detail. An extraction methodology combining measurements on equivalent transistors and flash cells is pro posed to discriminate the effects of defects on program/erase (P/E) efficiencies and on DC characteristics. A semi-analytical multiphonon-assisted charge trapping model is used to investigate the role and the impact of trapped charges on channel hot electron injection and Fowler-Nordheim efficiencies, threshold voltage variations and endurance characteristics.
Keywords :
flash memories; integrated circuit modelling; random-access storage; DC characteristic; Fowler-Nordheim efficiency; channel hot-electron injection; embedded nonvolatile memory flash device; endurance physical modeling; flash cell; program-erase efficiency; semianalytical multiphonon-assisted charge trapping model; threshold voltage variation; transistor; trapped charge impact; Analytical models; Ash; Degradation; Logic gates; Numerical models; Stress; Transient analysis;
Conference_Titel :
Memory Workshop (IMW), 2011 3rd IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4577-0225-9
Electronic_ISBN :
978-1-4577-0224-2
DOI :
10.1109/IMW.2011.5873186
