Characterization and Physical Modeling of Endurance in Embedded Non-Volatile Memory Technology

Author

Garetto, Davide ; Zaka, Alban ; Manceau, Jean-Philippe ; Rideau, Denis ; Dornel, Erwan ; Clark, William F. ; Schmid, Alexandre ; Jaouen, Hervé ; Leblebici, Yusuf

Author_Institution

IBM France, Crolles, France

fYear

2011

fDate

22-25 May 2011

Firstpage

1

Lastpage

4

Abstract

Transient and endurance mechanisms in high performance embedded non-volatile memory flash devices are investigated in detail. An extraction methodology combining measurements on equivalent transistors and flash cells is pro posed to discriminate the effects of defects on program/erase (P/E) efficiencies and on DC characteristics. A semi-analytical multiphonon-assisted charge trapping model is used to investigate the role and the impact of trapped charges on channel hot electron injection and Fowler-Nordheim efficiencies, threshold voltage variations and endurance characteristics.

Keywords

flash memories; integrated circuit modelling; random-access storage; DC characteristic; Fowler-Nordheim efficiency; channel hot-electron injection; embedded nonvolatile memory flash device; endurance physical modeling; flash cell; program-erase efficiency; semianalytical multiphonon-assisted charge trapping model; threshold voltage variation; transistor; trapped charge impact; Analytical models; Ash; Degradation; Logic gates; Numerical models; Stress; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2011 3rd IEEE International

Conference_Location

Monterey, CA

Print_ISBN

978-1-4577-0225-9

Electronic_ISBN

978-1-4577-0224-2

Type

conf

DOI

10.1109/IMW.2011.5873186

Filename

5873186