Title :
Effects of gate current stress on electrical characteristics of Ge channel pMOSFETs with Si passivation
Author :
Harada, Masatomi ; Taoka, Noriyuki ; Yamamoto, Toyoji ; Yamashita, Yoshimi ; Kiso, Osamu ; Sugiyama, Naoharu ; Takagi, Shin-ichi
Author_Institution :
MIRAI-ASET, MIRAI-ASET, Tsukuba
Abstract :
The electrical properties before and after gate current injection stress are studied for Ge pMOSFETs with Si passivation in order to study the interface robustness against carrier injection stress and the effects of interface charges on the channel mobility. It is found that MOSFETs with thicker Si passivation provide smaller amount of interface charge generation and lower mobility reduction after gate current injection stress.
Keywords :
MOSFET; carrier mobility; passivation; carrier injection stress; gate current injection stress; mobility reduction; pMOSFET; passivation; Annealing; Electric variables; Fabrication; Hydrogen; Leakage current; MOS capacitors; MOSFETs; Passivation; Robustness; Stress;
Conference_Titel :
Ultimate Integration of Silicon, 2008. ULIS 2008. 9th International Conference on
Conference_Location :
Udine
Print_ISBN :
978-1-4244-1729-2
Electronic_ISBN :
978-1-4244-1730-8
DOI :
10.1109/ULIS.2008.4527131
