• DocumentCode
    3517929
  • Title

    Threshold voltage in ultra thin FDSOI CMOS : Advanced triple interface model and experimental devices

  • Author

    Mazellier, J.-P. ; Andrieu, F. ; Faynot, O. ; Brevard, L. ; Buj, C. ; Cristoloveanu, S. ; Tiec, Y. Le ; Deleonibus, S.

  • Author_Institution
    CEA, Grenoble
  • fYear
    2008
  • fDate
    12-14 March 2008
  • Firstpage
    31
  • Lastpage
    34
  • Abstract
    We present a predictive three interfaces coupling model in long channel Ultra Thin Body SOI MOSFETs. This model includes the effects of volume inversion, thin BOX and film, and substrate-BOX interface. This allows us to perfectly reproduce both simulations and experimental results extracted on FDSOI nMOSFET with 145 and 11 nm thick BOX.
  • Keywords
    CMOS integrated circuits; MOSFET; interface phenomena; silicon-on-insulator; advanced triple interface model; experimental devices; long channel ultra thin body SOI MOSFET; predictive three interfaces coupling model; substrate-BOX interface; threshold voltage; ultra thin FDSOI CMOS; volume inversion; Etching; Hafnium oxide; MOSFET circuits; Random access memory; Semiconductor device modeling; Semiconductor films; Silicon; Substrates; Threshold voltage; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultimate Integration of Silicon, 2008. ULIS 2008. 9th International Conference on
  • Conference_Location
    Udine
  • Print_ISBN
    978-1-4244-1729-2
  • Electronic_ISBN
    978-1-4244-1730-8
  • Type

    conf

  • DOI
    10.1109/ULIS.2008.4527135
  • Filename
    4527135
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3517929