Influence of neodymium dopant on TiO2 structure

Author

Zielinski, M. ; Wojcieszak, D. ; Domaradzki, J. ; Kaczmarek, D. ; Prociow, E.

Author_Institution

Fac. of Microsyst. Electron. & Photonics, Wroclaw Univ. of Technol., Wroclaw, Poland

fYear

2010

fDate

12-16 May 2010

Firstpage

35

Lastpage

39

Abstract

In this work structural properties of TiO₂ thin films doped with different amounts of Nd have been presented. Thin films were deposited on silicon substrates using high energy reactive magnetron sputtering process and for the measurements TiO₂ doped with 0.84 at. % and 8.51 at. % of Nd have been selected. Diversification of the thin film surface was investigated using atomic force microscope. The results have shown that distribution of grains size the thin films was dependent on the amount of neodymium dopant. Moreover structural characterization of the thin films with use of X-Ray Diffraction method has shown that different structure of the TiO₂ thin films was received with selected amount of Nd (0.84 and 8.51 at. %) and by additional annealing.

Keywords

X-ray diffraction; annealing; atomic force microscopy; grain size; neodymium; semiconductor growth; semiconductor materials; semiconductor thin films; silicon; sputter deposition; titanium compounds; AFM; Si; TiO₂:Nd; X-ray diffraction method; XRD; annealing; atomic force microscope; grain size distribution; high energy reactive magnetron sputtering process; neodymium doping; silicon substrates; structural properties; thin film surface diversification; titania structure; titania thin films; Annealing; Grain size; Nanostructures; Neodymium; Surface roughness; Surface treatment; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Technology (ISSE), 2010 33rd International Spring Seminar on

Conference_Location

Warsaw

Print_ISBN

978-1-4244-7849-1

Electronic_ISBN

978-1-4244-7850-7

Type

conf

DOI

10.1109/ISSE.2010.5547251

Filename

5547251