• DocumentCode
    3517975
  • Title

    25nm 64Gb 130mm² 3bpc NAND Flash Memory

  • Author

    Goldman, M. ; Pangal, K. ; Naso, G. ; Goda, A.

  • fYear
    2011
  • fDate
    22-25 May 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    25nm NAND technology-based 64Gb 3bpc NAND Flash memory with die size of 130mm2 (6.15GB/cm2) is presented. The design including the array architecture is optimized for 25nm process technology while achieving world class performance of 100μs tRD, 2300μs tPROG for write throughput of 6.8MB/s with reliability meeting business requirements.
  • Keywords
    NAND circuits; flash memories; NAND flash memory; array architecture; reliability meeting business requirement; size 25 nm; Arrays; Couplings; Flash memory; Programming; Reliability; Routing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Memory Workshop (IMW), 2011 3rd IEEE International
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    978-1-4577-0225-9
  • Electronic_ISBN
    978-1-4577-0224-2
  • Type

    conf

  • DOI
    10.1109/IMW.2011.5873197
  • Filename
    5873197
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3517975