Title :
Diffusion gettering of metal impurities in crystalline silicon
Author :
Savin, Hele ; Vähänissi, Ville ; Yli-Koski, Marko ; Talvitie, Heli ; Haarahiltunen, Antti
Author_Institution :
Dept. of Micro- & Nanosci., Aalto Univ., Aalto, Finland
Abstract :
We present here our latest results of boron and phosphorus diffusion gettering of iron in crystalline silicon. The gettering efficiency is evaluated measuring both the minority carrier lifetime as well as the solar cell parameters. The results indicate that the optimal dopant and time-temperature profiles strongly depend on the thermal history as well as the initial iron level present in silicon.
Keywords :
boron; elemental semiconductors; impurities; iron; minority carriers; phosphorus; silicon; solar cells; Si; boron diffusion gettering; crystalline silicon; diffusion gettering; iron level; metal impurities; minority carrier lifetime; optimal dopant profiles; phosphorus diffusion gettering; solar cell parameters; time-temperature profiles; Boron; Gettering; Impurities; Integrated circuit modeling; Iron; Photovoltaic cells; Silicon; charge carrier lifetime; gettering; iron; photovoltaic cells; silicon;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-0064-3
DOI :
10.1109/PVSC.2012.6317879
