DocumentCode
3517991
Title
Diffusion gettering of metal impurities in crystalline silicon
Author
Savin, Hele ; Vähänissi, Ville ; Yli-Koski, Marko ; Talvitie, Heli ; Haarahiltunen, Antti
Author_Institution
Dept. of Micro- & Nanosci., Aalto Univ., Aalto, Finland
fYear
2012
fDate
3-8 June 2012
Abstract
We present here our latest results of boron and phosphorus diffusion gettering of iron in crystalline silicon. The gettering efficiency is evaluated measuring both the minority carrier lifetime as well as the solar cell parameters. The results indicate that the optimal dopant and time-temperature profiles strongly depend on the thermal history as well as the initial iron level present in silicon.
Keywords
boron; elemental semiconductors; impurities; iron; minority carriers; phosphorus; silicon; solar cells; Si; boron diffusion gettering; crystalline silicon; diffusion gettering; iron level; metal impurities; minority carrier lifetime; optimal dopant profiles; phosphorus diffusion gettering; solar cell parameters; time-temperature profiles; Boron; Gettering; Impurities; Integrated circuit modeling; Iron; Photovoltaic cells; Silicon; charge carrier lifetime; gettering; iron; photovoltaic cells; silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location
Austin, TX
ISSN
0160-8371
Print_ISBN
978-1-4673-0064-3
Type
conf
DOI
10.1109/PVSC.2012.6317879
Filename
6317879
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