Nano Accumulation-Mode Suspended-Gate MOSFET: Impact of adhesion forces on electro-mechanical characteristics

Author

Collonge, Michaë ; Vinet, M. ; Deleonibus, S. ; Ghibaudo, G.

Author_Institution

CEA-LETI, Grenoble

fYear

2008

fDate

12-14 March 2008

Firstpage

53

Lastpage

56

Abstract

For the first time, a complete and realistic study of a nano accumulation-mode suspended-gate metal oxide semiconductor field effect transistor (AM SG- MOSFET) is proposed. Adhesion forces described as Van der Waals interactions are considered and it is shown that they strongly impact the electro-mechanical characteristics of the device. They induce a minimal value for the spring constant of the gate and this drastically affects device design. Considering adhesion forces into a physically complete modelling allows knowing the realistic potentialities of an AM SG-MOSFET and the way to design it for low-power applications and hybrid NEMS-CMOS devices.

Keywords

CMOS integrated circuits; MOSFET; adhesion; low-power electronics; van der Waals forces; Van der Waals interactions; adhesion forces; electro-mechanical characteristics; hybrid NEMS-CMOS devices; low-power applications; nano accumulation-mode suspended-gate MOSFET; Adhesives; Air gaps; Capacitance; Capacitive sensors; Electrostatics; FETs; MOSFET circuits; Micromechanical devices; Solid state circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration of Silicon, 2008. ULIS 2008. 9th International Conference on

Conference_Location

Udine

Print_ISBN

978-1-4244-1729-2

Electronic_ISBN

978-1-4244-1730-8

Type

conf

DOI

10.1109/ULIS.2008.4527139

Filename

4527139