DocumentCode
3518048
Title
Simulation of self-heating effects in 30nm gate length FinFET
Author
Braccioli, M. ; Curatola, G. ; Yang, Y. ; Sangiorgi, E. ; Fiegna, C.
Author_Institution
ARCES-DEIS Univ. Bologna & IUNET, Cesena
fYear
2008
fDate
12-14 March 2008
Firstpage
71
Lastpage
74
Abstract
This paper presents a detailed thermal analysis of nanoscale FinFET devices. A three-dimensional electro-thermal device simulator, calibrated against Monte Carlo simulations at various temperatures, is adopted in order to study self-heating effects in Fin-FETs, and their dependence on geometrical parameters such as buried oxide thickness, source/drain extension length, fin-pitch and fin height.
Keywords
MOSFET; Monte Carlo methods; nanoelectronics; semiconductor device models; thermal analysis; 3D electrothermal device simulator; Monte Carlo simulation; nanoscale FinFET devices; self-heating effects; thermal analysis; Analytical models; FinFETs; MOSFETs; Nanoscale devices; Passivation; Semiconductor films; Silicon on insulator technology; Temperature dependence; Thermal conductivity; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultimate Integration of Silicon, 2008. ULIS 2008. 9th International Conference on
Conference_Location
Udine
Print_ISBN
978-1-4244-1729-2
Electronic_ISBN
978-1-4244-1730-8
Type
conf
DOI
10.1109/ULIS.2008.4527143
Filename
4527143
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