Temperature dependence of AC floating body effects in PD SOI nMOS

Author

Ying-Che Tseng ; Huang, W.M. ; Hwang, C. ; Welch, P. ; Woo, J.C.S.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

fYear

1999

fDate

4-7 Oct. 1999

Firstpage

26

Lastpage

27

Abstract

AC floating body effects have significantly impacted SOI analog circuit performance, such as degraded linearity due to the kink on output conductance (G/sub DS/) (Tseng et al., 1998) and higher phase noise due to low-frequency (LF) noise overshoot (Tseng et al., 1998). This is especially true for partially-depleted (PD) SOI MOSFETs. Recent high density integration of CMOS on a single chip increases the power dissipation density, resulting in an increased operating temperature. Only a few papers address the influence of high temperature operation for SOI analog applications (Dessard et al., 1998; Eggermont et al., 1996). In this study, AC floating body effects are explored in a wide temperature range (from 218 K to 423 K).

Keywords

MOSFET; semiconductor device noise; semiconductor device testing; silicon-on-insulator; thermal analysis; 218 to 423 K; AC floating body effects; CMOS single chip; PD SOI nMOS; SOI analog applications; SOI analog circuit performance; Si-SiO/sub 2/; high density integration; high temperature operation; kink effect; linearity; low-frequency noise overshoot; operating temperature; output conductance; partially-depleted SOI MOSFETs; phase noise; power dissipation density; temperature dependence; temperature range; Analog circuits; Circuit noise; Degradation; Linearity; Low-frequency noise; MOS devices; MOSFETs; Phase noise; Power dissipation; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1999. Proceedings. 1999 IEEE International

Conference_Location

Rohnert Park, CA, USA

ISSN

1078-621X

Print_ISBN

0-7803-5456-7

Type

conf

DOI

10.1109/SOI.1999.819841

Filename

819841