DocumentCode :
3518062
Title :
Temperature dependence of AC floating body effects in PD SOI nMOS
Author :
Ying-Che Tseng ; Huang, W.M. ; Hwang, C. ; Welch, P. ; Woo, J.C.S.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
fYear :
1999
fDate :
4-7 Oct. 1999
Firstpage :
26
Lastpage :
27
Abstract :
AC floating body effects have significantly impacted SOI analog circuit performance, such as degraded linearity due to the kink on output conductance (G/sub DS/) (Tseng et al., 1998) and higher phase noise due to low-frequency (LF) noise overshoot (Tseng et al., 1998). This is especially true for partially-depleted (PD) SOI MOSFETs. Recent high density integration of CMOS on a single chip increases the power dissipation density, resulting in an increased operating temperature. Only a few papers address the influence of high temperature operation for SOI analog applications (Dessard et al., 1998; Eggermont et al., 1996). In this study, AC floating body effects are explored in a wide temperature range (from 218 K to 423 K).
Keywords :
MOSFET; semiconductor device noise; semiconductor device testing; silicon-on-insulator; thermal analysis; 218 to 423 K; AC floating body effects; CMOS single chip; PD SOI nMOS; SOI analog applications; SOI analog circuit performance; Si-SiO/sub 2/; high density integration; high temperature operation; kink effect; linearity; low-frequency noise overshoot; operating temperature; output conductance; partially-depleted SOI MOSFETs; phase noise; power dissipation density; temperature dependence; temperature range; Analog circuits; Circuit noise; Degradation; Linearity; Low-frequency noise; MOS devices; MOSFETs; Phase noise; Power dissipation; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1999. Proceedings. 1999 IEEE International
Conference_Location :
Rohnert Park, CA, USA
ISSN :
1078-621X
Print_ISBN :
0-7803-5456-7
Type :
conf
DOI :
10.1109/SOI.1999.819841
Filename :
819841
Link To Document :
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