Title :
Thermal modeling of thin-film SOI transistors
Author :
Asheghi, M. ; Sverdrup, P. ; Goodson, K.E.
Author_Institution :
Dept. of Mech. Eng., Stanford Univ., CA, USA
Abstract :
Summary form only given. Predictions and analysis of the temperature field in a SOI device can be performed at several levels of complexity. Numerical simulations (e.g. Berger and Chai, 1991) and analytical methods (e.g. Goodson and Flik, 1992) have been used extensively to estimate the temperature field in a SOI device with different levels of accuracy. Numerical simulations of the temperature field in a SOI device can precisely determine the hot spots in a transistor, if proper thermal properties and accurate modeling of the heat generation in the device are considered. The analytical methods can provide physical insights into the effect of SOI device dimensions and thermal properties on the device temperature rise. This work aims to demonstrate the impact of the size effect on the thermal conductivity of thin silicon layers and subsequently on the SOI device thermal resistance.
Keywords :
MOSFET; numerical analysis; semiconductor device models; silicon-on-insulator; thermal analysis; thermal conductivity; thermal resistance; SOI device; SOI device dimensions; SOI device thermal resistance; Si-SiO/sub 2/; analysis complexity; analytical methods; device temperature rise; heat generation; hot spots; modeling; numerical simulation; size effect; temperature field; temperature field estimation; thermal conductivity; thermal modeling; thermal properties; thin silicon layers; thin-film SOI transistors; Discrete event simulation; Numerical simulation; Phonons; Predictive models; Scattering; Silicon compounds; Temperature distribution; Thermal conductivity; Thermal resistance; Thin film transistors;
Conference_Titel :
SOI Conference, 1999. Proceedings. 1999 IEEE International
Conference_Location :
Rohnert Park, CA, USA
Print_ISBN :
0-7803-5456-7
DOI :
10.1109/SOI.1999.819842
