High frequency losses in transmission lines made on SIMOX, bulk silicon and depleted silicon/silicon structures formed by wafer bonding

Author

Johansson, Mikael ; Bergh, M. ; Bengtsson, S.

Author_Institution

Dept. of Microelectron., Chalmers Univ. of Technol., Goteborg, Sweden

fYear

1999

fDate

4-7 Oct. 1999

Firstpage

30

Lastpage

31

Abstract

Wafer bonding and etch-back has been used to manufacture a silicon material intended as substrate for high frequency applications. The space charge region surrounding the bonded silicon/silicon interface depletes the silicon, thereby causing semi-insulating behaviour at high frequencies. The formed material was characterized using measurements on metal transmission lines and the results were compared to similar measurements on SIMOX and bulk silicon wafers.

Keywords

SIMOX; elemental semiconductors; etching; high-frequency transmission lines; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; interface states; interface structure; microwave integrated circuits; silicon; space charge; wafer bonding; Al-Si; Al-SiO/sub 2/-Si; SIMOX; SIMOX wafers; Si; bonded silicon/silicon interface; bulk silicon; bulk silicon wafers; depleted silicon/silicon structures; etch-back; high frequency applications; high frequency losses; metal transmission line measurements; semi-insulating behaviour; silicon depletion; silicon substrate material manufacture; space charge region; transmission lines; wafer bonding; Etching; Frequency; Inorganic materials; Manufacturing; Propagation losses; Silicon; Space charge; Transmission line measurements; Transmission lines; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1999. Proceedings. 1999 IEEE International

Conference_Location

Rohnert Park, CA, USA

ISSN

1078-621X

Print_ISBN

0-7803-5456-7

Type

conf

DOI

10.1109/SOI.1999.819843

Filename

819843