Author :
Kim, M.-S. ; Popovici, M. ; Swerts, J. ; Pawlak, M.A. ; Tomida, K. ; Kaczer, B. ; Opsomer, K. ; Schaekers, M. ; Tielens, H. ; Vrancken, C. ; Van Elshocht, S. ; Debusschere, I. ; Altimime, L. ; Kittl, J.A.
Abstract :
Electrical data of advanced capacitor dielectrics such as Sr-rich (Sr/(Sr + Ti) ~ 62%) strontium titanate (STO), rutile TiO2, which have dielectric constants higher than 60 even with physical thicknesses in the 7-10 nm range are presented. A practical capacitor model is proposed based on planar metal insulator-metal (MIM) system fabricated using 300 mm toolsets to access required capacitor dielectrics and to predict technical challenges of each technology node. Based on this practical model, mass production friendly path for the introduction of advanced capacitor dielectrics and its choice of electrode to extend life time of Dynamic Random Access Memory (DRAM) is proposed.
Keywords :
DRAM chips; MIM devices; capacitors; high-k dielectric thin films; permittivity; DRAM; advanced capacitor dielectrics; dielectric constants; dynamic random access memory; electrode; planar metal insulator-metal system; size 300 mm; size 7 nm to 10 nm; Capacitors; Electrodes; Films; Random access memory; Strontium; Tin;
