• DocumentCode
    3518120
  • Title

    Latest Advances and Roadmap for In-Plane and Perpendicular STT-RAM

  • Author

    Driskill-Smith, A. ; Apalkov, D. ; Nikitin, V. ; Tang, X. ; Watts, S. ; Lottis, D. ; Moon, K. ; Khvalkovskiy, A. ; Kawakami, R. ; Luo, X. ; Ong, A. ; Chen, E. ; Krounbi, M.

  • Author_Institution
    Grandis, Inc., Milpitas, CA, USA
  • fYear
    2011
  • fDate
    22-25 May 2011
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    STT-RAM (Spin-Transfer Torque Random Access Memory) is a second-generation magnetic random access memory (MRAM) technology that is fast, non-volatile, durable, and scalable to future technology nodes [1-2]. In this paper, we present the latest advances in in-plane and perpendicular STT-RAM development and outline STT-RAM´s future prospects, applications and roadmap.
  • Keywords
    random-access storage; MRAM technology; in-plane STT-RAM; perpendicular STT-RAM; roadmap; second-generation magnetic random access memory technology; spin-transfer torque random access memory; Computer architecture; Magnetic tunneling; Materials; Microprocessors; Mobile communication; Random access memory; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Memory Workshop (IMW), 2011 3rd IEEE International
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    978-1-4577-0225-9
  • Electronic_ISBN
    978-1-4577-0224-2
  • Type

    conf

  • DOI
    10.1109/IMW.2011.5873205
  • Filename
    5873205
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3518120