Title :
The opto-electronic physics that broke the efficiency limit in solar cells
Author :
Yablonovitch, Eli ; Miller, Owen D. ; Kurtz, Sarah R.
Author_Institution :
Mater. Sci. Div., Lawrence Berkeley Nat. Lab., Berkeley, CA, USA
Abstract :
The internal physics of a solar cell changes as it approaches the fundamental Shockley-Queisser limit. Photonic considerations overtake electronic ones, as an intense internal and external luminescence requires careful photon management. Counter-intuitively, maximizing light extraction increases voltage and therefore efficiency. Until 2010 the one-sun, single-junction efficiency record was set by a GaAs solar cell with an efficiency of 26.4% and an open-circuit voltage VOC= 1.03 V. Alta Devices recently improved the record with a GaAs cell that achieved 28.8% efficiency and VOC=1.12V, demonstrating the importance of photon management. Even with the best materials, the highest efficiencies cannot be achieved unless the solar cell is also designed to also be a good light emitting diode (LED). The physics of light extraction will be necessary in the next generation of high-efficiency solar cells.
Keywords :
III-V semiconductors; gallium arsenide; light emitting diodes; photons; solar cells; Alta Devices; GaAs; LED; Shockley-Queisser limit; efficiency 26.4 percent; efficiency 28.8 percent; external luminescence; high-efficiency solar cells; internal luminescence; light emitting diode; light extraction; one-sun efficiency; open-circuit voltage; optoelectronic physics; photon management; single-junction efficiency; solar cell internal physics; voltage 1.03 V; voltage 1.12 V; Force; Gallium arsenide; Indexes; Photonics; Photovoltaic cells; Reflectivity; Shockley-Queisser; external luminescence; high efficiency; open-circuit voltage; photovoltaics;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-0064-3
DOI :
10.1109/PVSC.2012.6317891